Inductive switching of 4H-SiC gate turn-off thyristors

IEEE Electron Device Letters

Volumn 23, Issue 6, 2002, Pages 318-320

  Bayne, S B ^a,b   Tipton, C W ^b   Griffin, T ^b   Scozzie, C J ^a,b   Geil, B ^b   Agarwal, A K ^a,c   Richmond, J ^c  

^a IEEE   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c Arkansas Power Electronics International Inc   (United States)

Author keywords

Gate turn off thyristor; Power conversion; Silicon carbide; Switching circuits; Thyristor circuits

Indexed keywords

HYDROGENATED SILICON CARBIDE TURN OFF THYRISTORS; INDUCTIVE SWITCHING; POWER DISSIPATION;

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC LOADS; ELECTRIC POWER SUPPLIES TO APPARATUS; ELECTRIC RESISTANCE MEASUREMENT; GAIN MEASUREMENT; GATES (TRANSISTOR); HIGH TEMPERATURE OPERATIONS; POWER INDUCTORS; SILICON CARBIDE; SWITCHING CIRCUITS; THRESHOLD VOLTAGE;

THYRISTORS;

EID: 0036611242     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.1004221     Document Type: Letter

References (5)

1. Performance evaluation of silicon carbide devices in power electronics
2. 3100 V asymmetrical gate turn-off (GTO) thyristors in 4H-SiC
3. 2600 V, 12 A, 4H-SiC asymmetrical gate turn-off (GTO) thyristor development