Half-bridge inverter using 4H-SiC gate turn-off thyristors

IEEE Electron Device Letters

Volumn 23, Issue 4, 2002, Pages 194-196

  Tipton, C W ^a   Bayne, S B ^a   Griffin, T E ^a   Scozzie, C J ^a   Geil, B ^a   Agarwal, A K ^b   Richmond, J ^b  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

Gate turn off thyristor; Half bridge inverter; Power circuits; Silicon carbide; Thyristor circuits

Indexed keywords

CURRENT DENSITY; ELECTRIC INVERTERS; ELECTRIC NETWORK TOPOLOGY; ELECTRIC POTENTIAL; POWER ELECTRONICS; POWER INTEGRATED CIRCUITS; PULSE MODULATION; SILICON CARBIDE; SWITCHING CIRCUITS;

HALF BRIDGE INVERTER; SWITCHING FREQUENCY;

THYRISTORS;

EID: 0036541803     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.992836     Document Type: Article

References (8)

1. Power devices
2. High current density 800-V 4H-SiC gate turn-off thyristors
3. 3100 V, asymmetrical, gate turn-off (GTO) thyristors in 4H-SiC
4. Silicon carbide thyristors for electric guns
5. Motorola semiconductor appl. note AN1624
6. Recent advances in high temperature, high frequency SiC devices