Performance limits of a closed-loop, micro-g silicon accelerometer with deposited rigid electrodes

Proceedings of the International Conference on Microelectronics, ICM

Volumn 2000-October, Issue , 2000, Pages 313-316

  Yazdi, N ^a,b   Najafi, K ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; MICROELECTRONICS; TIME DOMAIN ANALYSIS; UNITS OF MEASUREMENT;

DESIGN AND DEVELOPMENT; INERTIAL MEASUREMENT UNIT; INTERFACE ELECTRONICS; MECHANICAL AND ELECTRICAL; MICROGRAVITY MEASUREMENT; PERFORMANCE LIMITS; SILICON ACCELEROMETERS; TIME DOMAIN MODELING;

ACCELEROMETERS;

EID: 84979508787     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICM.2000.916467     Document Type: Conference Paper

References (7)

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3. T. V. Roszhart, et.al., "An inertial-grade micromachined vibrating beam accelerometer," in Proc. Transducers '95, pp. 656-658, June 1995.
4. C.Liu, et.al.,"Characterization of a high-sensitivity micromachined tunneling accelerometer with micro-g resolution," J. Microelectromechanical Systems, vol. 2, pp. 235-244, June 1998.
5. N. Yazdi and K. Najafi, "An all-Silicon single-wafer fabrication technology for precision microaccelerometers," Proc. Transducers'97, pp. 1181-1184, June 1997.
6. N. Yazdi, K. Najafi, "An Interface IC for A Capacitive Silicon μg Accelerometer," Tech. Digest ISSC'C99, Feb. 1999, pp. 132-133.
7. B.E. Boser and R. T. Howe, "Surface Micromachined Accelerometers," IEEE J. of Solid-State Circuits, vol. 31, pp. 366-375, March 1996.