Monolayer single-crystal 1T′-MoTe2 grown by chemical vapor deposition exhibits weak antilocalization effect

Nano Letters

Volumn 16, Issue 7, 2016, Pages 4297-4304

  Naylor, Carl H ^a   Parkin, William M ^a   Ping, Jinglei ^a   Gao, Zhaoli ^a   Zhou, Yu Ren ^a   Kim, Youngkuk ^a   Streller, Frank ^b   Carpick, Robert W ^b   Rappe, Andrew M ^a   Drndić, Marija ^a   Kikkawa, James M ^a   Johnson, A T Charlie ^a  

^a UNIVERSITY OF PENNSYLVANIA   (United States)

^b UNIVERSITY OF PENNSYLVANIA   (United States)

Author keywords

1T MoTe2; CVD; monolayer growth; Transition metal dichalcogenide; weak antilocalization

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL ATOMIC STRUCTURE; DEPOSITION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MONOLAYERS; OPTICAL PROPERTIES; SINGLE CRYSTALS; TRANSITION METALS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR DEPOSITION;

ELECTRICAL AND OPTICAL PROPERTIES; MONOLAYER GROWTH; NANOELECTRONIC DEVICES; SPIN-ORBIT COUPLINGS; TOPOLOGICAL INSULATORS; TRANSISTOR STRUCTURE; TRANSITION METAL DICHALCOGENIDES; WEAK ANTILOCALIZATION;

X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMISTRY; COLD; GAS; RAMAN SPECTROMETRY; TEMPERATURE; X RAY PHOTOEMISSION SPECTROSCOPY;

COLD TEMPERATURE; GASES; PHOTOELECTRON SPECTROSCOPY; SPECTRUM ANALYSIS, RAMAN; TEMPERATURE;

EID: 84978725540     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/acs.nanolett.6b01342     Document Type: Article

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