The research on breakdown voltage of high voltage SOI LDMOS devices with shielding trench

2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings

Volumn 1, Issue , 2001, Pages 159-161

  Liu, Qiyu ^a   Li, Zhaoji ^a   Zhang, Bo ^a   Fang, Jian ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84966534344     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2001.981446     Document Type: Conference Paper

References (8)

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8. J. S. Ajit, D. Kinzer, and N. Ranjan, , Proc. of ISPSD, (Graz, Austria, 1993) p.230