Optoelectronic structure and related transport properties of BiCuSeO-based oxychalcogenides: First principle calculations

Solid State Sciences

Volumn 58, Issue , 2016, Pages 86-93

  Khan, Wilayat ^a   Azam, Sikander ^a   Kanoun, Mohammed Benali ^b   Goumri Said, Souraya ^b  

^a UNIVERSITY OF WEST BOHEMIA   (Czech Republic)

^b ALFAISAL UNIVERSITY   (Saudi Arabia)

Author keywords

Chalcogenides; Electronic structure; Layered compounds; Optical properties; Semiconductors; Thermoelectrics

Indexed keywords

BISMUTH COMPOUNDS; CHALCOGENIDES; COPPER COMPOUNDS; ELECTRONIC STRUCTURE; ENERGY GAP; INORGANIC COMPOUNDS; OPTICAL PROPERTIES; SEEBECK COEFFICIENT; SELENIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; STATISTICAL MECHANICS; TELLURIUM COMPOUNDS; THERMAL CONDUCTIVITY; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY;

BOLTZMANN TRANSPORT THEORY; FIRST PRINCIPLE CALCULATIONS; FULL POTENTIAL LINEAR AUGMENTED PLANE WAVE METHODS; LATTICE THERMAL CONDUCTIVITY; LAYERED COMPOUND; OPTO-ELECTRONIC STRUCTURES; THERMOELECTRIC APPLICATION; THERMOELECTRICS;

SULFUR COMPOUNDS;

EID: 84975248775     PISSN: 12932558     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solidstatesciences.2016.05.012     Document Type: Article

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