메뉴 건너뛰기




Volumn 48, Issue , 2015, Pages 244-250

DFT and modified Becke Johnson (mBJ) potential investigations of the optoelectronic properties of SnGa4Q7 (Q Combining double low line S, Se) compounds: Transparent materials for large energy conversion

Author keywords

Chalcogenides; Electronic structure; Energy storage; Optical properties; Semiconductors

Indexed keywords

CHALCOGENIDES; ELECTRONIC STRUCTURE; ENERGY CONVERSION; ENERGY DISSIPATION; ENERGY GAP; ENERGY STORAGE; GALLIUM COMPOUNDS; INORGANIC COMPOUNDS; OPTICAL PROPERTIES; REFRACTIVE INDEX; SEMICONDUCTOR MATERIALS; SOLAR ENERGY; TIN COMPOUNDS; WIDE BAND GAP SEMICONDUCTORS;

EID: 84940861829     PISSN: 12932558     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solidstatesciences.2015.08.015     Document Type: Article
Times cited : (11)

References (30)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.