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Volumn 48, Issue , 2015, Pages 244-250
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DFT and modified Becke Johnson (mBJ) potential investigations of the optoelectronic properties of SnGa4Q7 (Q Combining double low line S, Se) compounds: Transparent materials for large energy conversion
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Author keywords
Chalcogenides; Electronic structure; Energy storage; Optical properties; Semiconductors
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Indexed keywords
CHALCOGENIDES;
ELECTRONIC STRUCTURE;
ENERGY CONVERSION;
ENERGY DISSIPATION;
ENERGY GAP;
ENERGY STORAGE;
GALLIUM COMPOUNDS;
INORGANIC COMPOUNDS;
OPTICAL PROPERTIES;
REFRACTIVE INDEX;
SEMICONDUCTOR MATERIALS;
SOLAR ENERGY;
TIN COMPOUNDS;
WIDE BAND GAP SEMICONDUCTORS;
ABSORPTION CO-EFFICIENT;
CONDUCTION-BAND MINIMUM;
DENSITY FUNCTIONAL FORMALISM;
ELECTRONIC BAND STRUCTURE;
ELECTRONIC CHARGE DENSITY;
ELECTRONIC STRUCTURE AND OPTICAL PROPERTIES;
FULL POTENTIAL LINEARIZED AUGMENTED PLANE WAVE METHOD;
OPTOELECTRONIC PROPERTIES;
SELENIUM COMPOUNDS;
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EID: 84940861829
PISSN: 12932558
EISSN: None
Source Type: Journal
DOI: 10.1016/j.solidstatesciences.2015.08.015 Document Type: Article |
Times cited : (11)
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References (30)
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