Minimize dishing effects during chemical mechanical planarization of copper damascene structures

2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings

Volumn 1, Issue , 2001, Pages 423-426

  Zhang, Guohai ^a   Qian, He ^a   Xia, Yang ^a   Wu, Dexin ^a  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84966622060     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2001.981509     Document Type: Conference Paper

References (6)

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4. Seiichi Kondo, Noriyuki Sakumn et al., J. Electrochem. Soc., 147, 3907(2000).
5. Liu Yuling, Li Jiaxi et al., Semiconductor Information, 37(5), 41(2000).
6. Joseph M. Steigerwald, Shyam P. Murarka et al., Chemical Mechanical Planarization of Microelectronic Materials, p256, John Wiley & Sons, Inc(1997).