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Volumn , Issue , 2002, Pages 253-257

The noise and linearity optimization for a 1.9-GHz CMOS low noise amplifier

Author keywords

CMOS LNA; IP3; Linearity; NF; Noise; RFIC

Indexed keywords

ANALOG CIRCUITS; ECONOMIC AND SOCIAL EFFECTS; MOSFET DEVICES; RECONFIGURABLE HARDWARE;

EID: 84966415452     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APASIC.2002.1031580     Document Type: Conference Paper
Times cited : (25)

References (6)
  • 1
    • 0031147079 scopus 로고    scopus 로고
    • 1.5-V, 1.5-GHz CMOS Low Noise Amplifier
    • May
    • D. K. Shaeffer, et al, "1.5-V, 1.5-GHz CMOS Low Noise Amplifier", Solid-State Circuits, IEEE Journal of Volume: 32, May 1997, pp. 745-759.
    • (1997) Solid-State Circuits, IEEE Journal of , vol.32 , pp. 745-759
    • Shaeffer, D.K.1
  • 3
    • 0035786561 scopus 로고    scopus 로고
    • Linearity, Noise Optimization for Two Stage RF CMOS LNA
    • Piljae Park, et al, "Linearity, Noise Optimization for Two Stage RF CMOS LNA", Proc. Of IEEE, Volume: 2, 2001, pp. 756-758.
    • (2001) Proc. of IEEE , vol.2 , pp. 756-758
    • Park, P.1
  • 4
    • 0042352885 scopus 로고    scopus 로고
    • Noise Contribution in A Fully Integrated 1-V, 2.5-GHz LNA in CMOS-SOI Technology
    • th IEEE International Conference on, Volume: 3, 2001, pp. 1611-1614.
    • (2001) th IEEE International Conference on , vol.3 , pp. 1611-1614
    • Tinella, C.1
  • 5
    • 0035307763 scopus 로고    scopus 로고
    • Noise Modeling and Characterization for 1.5-V 1.8-GHz SOI Low-Noise Amplifier
    • April
    • Wei Jin, et al, "Noise Modeling and Characterization for 1.5-V 1.8-GHz SOI Low-Noise Amplifier", IEEE Transaction on Electron Devices, Volume: 48, No. 4, April 2001, pp. 803-809.
    • (2001) IEEE Transaction on Electron Devices , vol.48 , Issue.4 , pp. 803-809
    • Jin, W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.