Giant spin-torque diode sensitivity in the absence of bias magnetic field

Nature Communications

Volumn 7, Issue , 2016, Pages

  Fang, Bin ^a   Carpentieri, Mario ^b   Hao, Xiaojie ^c   Jiang, Hongwen ^c   Katine, Jordan A ^d   Krivorotov, Ilya N ^e   Ocker, Berthold ^f   Langer, Juergen ^f   Wang, Kang L ^c   Zhang, Baoshun ^a   Azzerboni, Bruno ^g   Amiri, Pedram Khalili ^c   Finocchio, Giovanni ^g   Zeng, Zhongming ^a  

^a SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS   (China)

^b POLITECNICO DI BARI   (Italy)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d HGST   (United States)

^e UNIVERSITY OF CALIFORNIA   (United States)

^f Singulus Technologies   (Germany)

^g UNIVERSITY OF MESSINA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODE; ELECTRON; EQUIPMENT; MAGNETIC FIELD; PERFORMANCE ASSESSMENT; TEMPERATURE EFFECT;

ACCELERATION; ARTICLE; DIODE; ELECTRIC POTENTIAL; EXTERNAL BIAS; FILM; GENERATOR; MAGNETIC FIELD; MICROWAVE RADIATION; OSCILLATION; OSCILLATOR; ROOM TEMPERATURE; SIMULATION; SPIN TORQUE DIODE; TILTING; TORQUE;

EID: 84963642438     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms11259     Document Type: Article

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