Temperature dependence of the voltage-controlled perpendicular anisotropy in nanoscale MgO|CoFeB|Ta magnetic tunnel junctions

Applied Physics Letters

Volumn 104, Issue 11, 2014, Pages

  Alzate, Juan G ^a   Khalili Amiri, Pedram ^a,b   Yu, Guoqiang ^a   Upadhyaya, Pramey ^a   Katine, Jordan A ^c   Langer, Juergen ^d   Ocker, Berthold ^d   Krivorotov, Ilya N ^e   Wang, Kang L ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Inston Inc   (United States)

^c HGST   (United States)

^d Singulus Technologies   (Germany)

^e UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LINEAR DEPENDENCE; MAGNETIC TUNNEL JUNCTION; PERPENDICULAR ANISOTROPY; PERPENDICULAR MAGNETIC ANISOTROPY; POSSIBLE MECHANISMS; TEMPERATURE DEPENDENCE; VOLTAGE-CONTROLLED; WIDE TEMPERATURE RANGES;

COBALT COMPOUNDS; ELECTRIC FIELDS; MAGNESIA; MAGNETIC ANISOTROPY; MAGNETIC DEVICES; NANOTECHNOLOGY;

TEMPERATURE DISTRIBUTION;

EID: 84897823488     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4869152     Document Type: Article

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