A varactor with high capacitance tuning range in standard 0.25μm CMOS technology

European Solid-State Device Research Conference

Volumn , Issue , 2001, Pages 187-190

  Maget, Judith ^a   Tiebout, Marc ^a   Kraus, Rainer ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b BUNDESWEHR UNIVERSITY MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE TUNING; CMOS TECHNOLOGY;

EID: 84907553795     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2001.195232     Document Type: Conference Paper

References (4)

1. R. Castello, P. Erratico, S. Manzini and F. Svelto, "A ± 30% Tuning Range Varactor Compatible with Future Scaled Technologies", Symposium on VLSI Circuits, Digest of Technical Papers, 1998, pp. 34-35.
2. Wallace Ming Yip Wong, et al., "A Wide Tuning Range Gated Varactor", IEEE Journal of Solid State Circuits, Vol. 35, No. 5, May 2000, pp. 773-779.
3. P. Andreani and S. Mattisson, "On the Use of MOS Varactors in RF VCO's ", IEEE Journal of Solid State Circuits, Vol. 35, No. 6, June 2000, pp. 905-910.
4. F. Svelto, S. Manzini and R. Castello, "A Three Terminal Varactor for RF IC's in Standard CMOS Technology", IEEE Transactions on Electron Devices, Vol. 47, No. 4, April 2000, pp. 893-895.