Comparison of CMOS VCOs for UMTS tuned by standard and novel varactors in standard 0.25μ m technology

European Solid-State Circuits Conference

Volumn , Issue , 2001, Pages 502-505

  Maget, J ^a   Tiebout, M ^a   Kraus, R ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b BUNDESWEHR UNIVERSITY MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER FREQUENCY; CMOS TECHNOLOGY; FIGURE OF MERITS; FREQUENCY TUNING RANGE; FULLY INTEGRATED; M-TECHNOLOGIES; NOVEL DEVICES; TUNING ELEMENTS;

CMOS INTEGRATED CIRCUITS; PHASE NOISE; TUNING; VARACTORS;

MOSFET DEVICES;

EID: 84893707542     PISSN: 19308833     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. P. Andreani and S. Mattisson, "On the Use of MOS Varactors in RF VCOs", IEEE Journal of Solid State Circuits, Vol. 35, No. 6, June 2000, pp. 905-910.
2. D.B. Leeson, "A simple model of feedback oscillator noise spectrum", Proc. IEEE, Feb. 1966, pp.
3. J. Craninkx, M. Steayert, "A 1.8-GHz Low-Phase-Noise CMOS VCO Using Optimized Hollow Spiral Inductors", Journal of Solid State Circuits, Vol. 32, No. 5 , May 1997, pp.736-744.
4. M. Tiebout, "Low power, low phasenoise, differentially tuned quadrature VCO-Design in standard CMOS", IEEE Journal of Solid State Circuits, Vol. 36, No. 7, July 2001, to be published.
5. F. Svelto, S. Manzini and R. Castello, "A Three Terminal Varactor for RF IC's in Standard CMOS Technology ", IEEE Transactions on Electron Devices, Vol. 47, No. 4, April 2000, pp. 893-895.
6. Kenneth O, "Estimation Methods for Quality Factors of Inductors Fabricated in Silicon Integrated Circuit Process Technologies ", IEEE Journal of Solid State Circuits, Vol. 33, No. 8, Aug. 1998, pp. 1249-1252.