TCAD evaluation of double implanted 4H-SiC power bipolar transistors

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Adachi, K ^a   Johnson, C M ^a   Ortolland, S ^a   Wright, N G ^a   O'Neill, A G ^a  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELECTRIC CURRENTS; ENERGY GAP; ION IMPLANTATION; IONIZATION; POWER ELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SILICON CARBIDE;

BIPOLAR JUNCTION TRANSISTORS (BJT);

BIPOLAR TRANSISTORS;

EID: 0033705989     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (7)

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2. Agarwal, AK, et al., Diamond and Related Materials, pp. 295-301.
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4. Bakowski, M., Gustafsson, U., Lindefelt, M., Silicon Carbide: A Review of Fundamental Questions and Applications to Current Device technology, Vol.II, pp421-440.
5. Grivickas, V. et al., Proc. ICSCRM 97, Part 1, pp. 529-532.
6. Galeckas, A. et al., Proc. ICSCRM 97, Part 1, pp. 533-536.
7. nd Ed., pp143.