Crystal growth and electronic structure of low-temperature phase SrMgF4

Journal of Solid State Chemistry

Volumn 236, Issue , 2016, Pages 89-93

  Atuchin, Victor V ^a,b,c   Goloshumova, Alina A ^d   Isaenko, Ludmila I ^c,d   Jiang, Xingxing ^e,f   Lobanov, Sergey I ^d   Zhang, Zhaoming ^g   Lin, Zheshuai ^e  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b TOMSK STATE UNIVERSITY   (Russian Federation)

^c NOVOSIBIRSK STATE UNIVERSITY   (Russian Federation)

^d SOBOLEV INSTITUTE OF GEOLOGY AND MINERALOGY   (Russian Federation)

^e INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^f UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^g AUSTRALIAN NUCLEAR SCIENCE AND TECHNOLOGY ORGANISATION   (Australia)

Author keywords

Electron structure; First principles calculations; Low temperature phase SrMgF4; Single crystal growth; X ray photoelectron spectroscopy

Indexed keywords

CALCULATIONS; CRYSTAL GROWTH; CRYSTAL GROWTH FROM MELT; CRYSTAL STRUCTURE; ELECTRONIC STRUCTURE; LOW TEMPERATURE PROPERTIES; SINGLE CRYSTALS; TEMPERATURE;

ELECTRON STRUCTURES; ELECTRONIC ORBITALS; FIRST-PRINCIPLES CALCULATION; GOOD OPTICAL QUALITY; LOW TEMPERATURE PHASE; PHOTOEMISSION SPECTRA; VERTICAL BRIDGMAN METHOD; X-RAY SOURCES;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84961194854     PISSN: 00224596     EISSN: 1095726X     Source Type: Journal    
DOI: 10.1016/j.jssc.2015.07.024     Document Type: Article

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