Joule heating of field emitter tip fabricated on glass substrate

2002 International Microprocesses and Nanotechnology Conference, MNC 2002

Volumn , Issue , 2002, Pages 336-337

  Higa, K ^a   Asano, T ^b  

^a OSHIMA NATIONAL COLLEGE OF MARITIME TECHNOLOGY   (Japan)

^b KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON EMISSION; FABRICATION; GLASS; HEATING; HYSTERESIS; JOULE HEATING; NANOTECHNOLOGY; SILICON; SUBSTRATES; THERMAL CONDUCTIVITY;

EMISSION CHARACTERISTICS; FIELD EMITTER TIPS; GLASS SUBSTRATES; HIGH ASPECT RATIO; LOW THERMAL CONDUCTIVITY; MEASUREMENT OF TEMPERATURE; NOVEL DEVICES; PHOSPHOR SCREENS;

FIELD EMISSION DISPLAYS;

EID: 84960394125     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMNC.2002.1178680     Document Type: Conference Paper

References (4)

1. K. Higa, K. Nishii and T. Asano: Appl. Phys. Lett. 71(1997) 983.
2. K. Higa and T. Asano: Tech. Dig. Microprocesses and Nanotechnology conf. 2001, Matsue, Shimane, Japan. (2001) 260.
3. K. Higa and T. Asano: Jpn. J. Appl. Phys. 41(2002) 4307.
4. D. J. Lee, B. K. Ju, W. B. Choi, J. W. Jeong, Y. H. Lee, J. Jang, K. B. Lee and M. H. Oh: Jpn. J. Appl. Phys. 38(1999) 1.