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Volumn 614, Issue , 2016, Pages 79-83

Comparison of ZnO:B and ZnO:Al layers for Cu(In,Ga)Se2 submodules

Author keywords

Chalcopyrite compound; Photovoltaic cells; Photovoltaic modules; Transparent conductive oxide; Zinc oxide

Indexed keywords

ALUMINUM COMPOUNDS; CONDUCTIVE FILMS; COPPER COMPOUNDS; ELECTRIC RESISTANCE; II-VI SEMICONDUCTORS; INFRARED DEVICES; OXIDE FILMS; PHOTOELECTROCHEMICAL CELLS; PHOTOVOLTAIC CELLS;

EID: 84959860809     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2016.03.004     Document Type: Article
Times cited : (21)

References (19)
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  • 7
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    • Transition between grain boundary and intragrain scattering transport mechanisms in boron-doped zinc oxide thin films
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    • Kobayashi, T.1    Yamauchi, K.2    Nakada, T.3
  • 13
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    • Interface control to enhance the fill factor over 0.70 in a large-area CIS-based thin-film PV technology
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    • Influences of deposition temperature on characteristics of B-doped ZnO films deposited by metal–organic chemical vapor deposition
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.