Negative differential resistance and rectifying performance induced by doped graphene nanoribbons p-n device

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 380, Issue 9-10, 2016, Pages 1049-1055

  Zhou, Yuhong ^a   Qiu, Nianxiang ^a   Li, Runwei ^a   Guo, Zhansheng ^b   Zhang, Jian ^a   Fang, Junfeng ^a   Huang, Aisheng ^a   He, Jian ^c   Zha, Xianhu ^a   Luo, Kan ^a   Yin, Jingshuo ^a   Li, Qiuwu ^a   Bai, Xiaojing ^a   Huang, Qing ^a   Du, Shiyu ^a  

^a NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING   (China)

^b SHANGHAI UNIVERSITY   (China)

^c DALIAN INSTITUTE OF CHEMICAL PHYSICS   (China)

Author keywords

Electronic transport properties; First principles; Graphene nanoribbons; Negative differential resistance; Rectifying performance

Indexed keywords

CALCULATIONS; DENSITY FUNCTIONAL THEORY; GRAPHENE; GRAPHENE DEVICES; GRAPHENE NANORIBBON; GRAPHITE ELECTRODES; NEGATIVE RESISTANCE; TRANSPORT PROPERTIES;

ELECTRONIC TRANSPORT PROPERTIES; FIRST PRINCIPLES; GRAPHENE NANORIBBONS; NEGATIVE DIFFERENTIAL RESISTANCES; RECTIFYING PERFORMANCE;

NANORIBBONS;

EID: 84955471818     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2016.01.010     Document Type: Article

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