Dopant interdiffusion effects in n-i-p structured spiro-OMeTAD hole transport layer of organometal halide perovskite solar cells

Organic Electronics

Volumn 31, Issue , 2016, Pages 71-76

  Jung, Min Cherl ^a   Qi, Yabing ^a  

^a OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY GRADUATE UNIVERSITY   (Japan)

Author keywords

AFM; DMC doped spiro OMeTAD; F4 TCNQ doped spiro OMeTAD; UPS; XPS

Indexed keywords

ATOMIC FORCE MICROSCOPY; GOLD DEPOSITS; HOLE MOBILITY; PEROVSKITE; PEROVSKITE SOLAR CELLS; SEMICONDUCTOR DOPING; SOLAR CELLS; THIN FILMS;

CHEMICAL STATE; DMC DOPED SPIRO-OMETAD; DOPANT DIFFUSION; F4-TCNQ; HOLE TRANSPORT LAYERS; HOLE TRANSPORT MATERIALS; INTERDIFFUSION EFFECTS; N-TYPE DOPING;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84955109752     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2016.01.018     Document Type: Article

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