Delay testing of MOS transistor with gate oxide short

Proceedings of the Asian Test Symposium

Volumn 2003-January, Issue , 2003, Pages 168-173

  Renovell, M ^a   Galliere J M ^a   Azais F ^a   Bertrand, Y ^a  

^a LIRMM   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; GATES (TRANSISTOR); RECONFIGURABLE HARDWARE;

ACCURATE ANALYSIS; BI-DIMENSIONAL ARRAYS; DELAY TESTING; GATE OXIDE; GATE OXIDE SHORTS; RANDOM PARAMETERS; SCALING DOWN;

MOS DEVICES;

EID: 84954445098     PISSN: 10817735     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ATS.2003.1250804     Document Type: Conference Paper

References (16)

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