Boolean and current detection of MOS transistor with Gate Oxide Short

IEEE International Test Conference (TC)

Volumn , Issue , 2001, Pages 1039-1048

  Renovell, M ^a   Galliere J M ^a   Azais F ^a   Bertrand, Y ^a  

^a LIRMM   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BOOLEAN ALGEBRA; ELECTRIC FAULT CURRENTS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); INTEGRATED CIRCUIT MANUFACTURE; VLSI CIRCUITS;

GATE OXIDE SHORT FAULTS;

MOSFET DEVICES;

EID: 0035684723     PISSN: 10893539     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (17)

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3. Reliability and electrical properties of Gate Oxide Shorts in CMOS ICs
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7. Analysis and modeling of MOS devices with Gate Oxide Short failures
8. Fault modeling of Gate Oxide Short, floating gate and bridging failures in CMOS circuits
9. Current vs. Logic testing of Gate Oxide Short, floating gate and bridging failures
10. Approach to the analysis of Gate Oxide Shorts in CMOS digital circuits
11. Quiescent current analysis and experimentation of defective CMOS circuits
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13. A detailed analysis and electrical modeling of Gate Oxide Shorts in MOS transistors
14. On the modeling and testing of Gate Oxide Shorts in CMOS logic gates
15. Analysis of Gate Oxide Shorts in CMOS circuits
16. A complete analysis of the voltage behaviour of MOS transistor with Gate Oxide Short
17. Analysing the characteristics of MOS transistors in the presence of Gate Oxide Short