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Volumn , Issue , 2001, Pages 12-17

Design of LNA at 2.4 GHz using 0.25 μm technology

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; INTEGRATED CIRCUIT DESIGN; INTEGRATED CIRCUITS; LOW NOISE AMPLIFIERS;

EID: 84952043684     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMIC.2001.942333     Document Type: Conference Paper
Times cited : (17)

References (13)
  • 7
    • 0035245434 scopus 로고    scopus 로고
    • Design of a 1.8 GHz low-noise amplifier for RF front-end in a 0.8 Ion CMOS technology
    • Feb
    • S. Park and W. Kim, Design of a 1.8 GHz low-noise amplifier for RF front-end in a 0.8 Ion CMOS technology, IEEE Trans. on Consumer Electronics, vol. 47, No. 1, pp. 10-15, Feb. 2001
    • (2001) IEEE Trans. on Consumer Electronics , vol.47 , Issue.1 , pp. 10-15
    • Park, S.1    Kim, W.2
  • 9
    • 0035967020 scopus 로고    scopus 로고
    • High-performance 5.2 GHz LNA with on-chip inductor to provide ESD protection
    • March
    • P. Leroux and M. Steyaert, High-performance 5.2 GHz LNA with on-chip inductor to provide ESD protection, Electronics Letters, vol. 37, No.7, pp. 467-469, March 2001
    • (2001) Electronics Letters , vol.37 , Issue.7 , pp. 467-469
    • Leroux, P.1    Steyaert, M.2
  • 10
    • 0035335240 scopus 로고    scopus 로고
    • A 5.2-GHz CMOS receiver with 62-dB image rejection
    • May
    • B. Razavi, A 5.2-Ghz CMOS receiver with 62-dB image rejection, IEEE Journal of Solid-State Circuits, vol. 36, No. 5, pp. 810-815, May 2001
    • (2001) IEEE Journal of Solid-State Circuits , vol.36 , Issue.5 , pp. 810-815
    • Razavi, B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.