Measurement of the breakdown voltage of lateral power metal-oxide-semiconductor field-effect-transistors on a silicon-on-insulator film with varying the surface design around the gate region

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers

Volumn 36, Issue 9 A, 1997, Pages 5516-5517

  Sumida, Hitoshi ^a   Hirabayashi, Atsuo ^a  

^a FUJI ELECTRIC CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY;

GATE OXIDE LENGTHS; LATERAL POWER METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS;

MOSFET DEVICES;

EID: 0031220015     PISSN: None     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.5516     Document Type: Article

References (5)