Residue removal after via-hole etching

ASMC (Advanced Semiconductor Manufacturing Conference) Proceedings

Volumn 2000-January, Issue , 2000, Pages 281-286

  Boumerzoug, M ^a   Xu, Han ^a   Bersin, R ^a   Mikus, L ^b   Horn, A ^b   Dopp, D ^b  

^a ULVAC Technologies Inc   (United States)

^b MOTOROLA INC   (United States)

Author keywords

Dry etching; Electric resistance; Plasma applications; Plasma devices; Plasma materials processing; Plasma temperature; Polymers; Resists; Solvents; Tin

Indexed keywords

COST EFFECTIVENESS; DRY ETCHING; ELECTRIC RESISTANCE; MANUFACTURE; PHOTORESISTS; PLASMA APPLICATIONS; PLASMA DEVICES; POLYMERS; SEMICONDUCTOR DEVICE MANUFACTURE; SHOTCRETING; TIN; TITANIUM OXIDES;

DEVICE PERFORMANCE; DOWN-STREAM PLASMAS; ELECTRICAL DATA; PLASMA MATERIALS-PROCESSING; PLASMA TEMPERATURE; POLYMER RESIDUE; RESISTS; WATER SOLUBLE COMPOUNDS;

SOLVENTS;

EID: 84949775988     PISSN: 10788743     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASMC.2000.902602     Document Type: Conference Paper

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