SCOPUS 정보 검색 플랫폼

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn 2000-January, Issue , 2000, Pages 876-879

Relationship between the photo-induced degradation characteristics and film structure of A-SI:H films prepared under various conditions

(4) Nishimoto, Tomonori a Takai, Madoka a Kondo, Michio a Matsuda, Akihisa a

a ELECTROTECHNICAL LABORATORY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EFFICIENCY; FILM GROWTH; METALLIC FILMS; SILICON; SOLAR CELLS;

CELL BEHAVIORS; CELL MEASUREMENT; HIGH GROWTH RATE; INITIAL EFFICIENCY; MODERATELY HIGH TEMPERATURE; PHOTOINDUCED DEGRADATION; SOLAR CELL PERFORMANCE; STABILIZED EFFICIENCY;

FILM PREPARATION;

EID: 84949566348 PISSN: 01608371 EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/PVSC.2000.916023 Document Type: Conference Paper

Times cited : (7)

References (6)

1
- 0006267170
- New diagnostics of the species responsible for degradation of high growth rate a-si:H
- R. Hayashi, T. Takagi, G. Ganguly, M. Fukawa, M. Kondo, and A. Matsuda, "New Diagnostics of the Species Responsible for Degradation of High Growth Rate a-Si:H", 2nd WCPEC, 1998, pp. 929.
- (1998) 2nd WCPEC , pp. 929
- Hayashi, R.¹ Takagi, T.² Ganguly, G.³ Fukawa, M.⁴ Kondo, M.⁵ Matsuda, A.⁶

2
- 0033531818
- Gas-phase diagnosis and high-rate growth of stable a-si:H
- T. Takagi, T. Hayashi, G. Ganguly, M. Kondo, and A. Matsuda, "Gas-Phase Diagnosis and High-Rate Growth of Stable a-Si:H", Thin Solid Films, 345, 1999, pp. 75-79.
- (1999) Thin Solid Films , vol.345 , pp. 75-79
- Takagi, T.¹ Hayashi, T.² Ganguly, G.³ Kondo, M.⁴ Matsuda, A.⁵

3
- 84949571470
- Effect of halogen additives on the stability of a-si:H films deposited at a high growth rate
- in press
- T. Nishimoto, T. Takagi, M. Kondo, and A. Matsuda, "Effect of Halogen Additives on the Stability of a-Si:H Films Deposited at a High Growth Rate", Sol. Energy Mater. & Sol. Cells, in press.
- Sol. Energy Mater. & Sol. Cells
- Nishimoto, T.¹ Takagi, T.² Kondo, M.³ Matsuda, A.⁴

4
- 0002958679
- Guiding principles for obtaining stabilized amorphous silicon at larger growth rates
- M. Takai, T. Nishimoto, T. Takagi, M. Kondo, and A. Matsuda, "Guiding Principles for Obtaining Stabilized Amorphous Silicon at Larger Growth Rates", J. Non-Cryst. Solids 266-269, 2000, pp. 90-94.
- (2000) J. Non-Cryst. Solids , vol.266-269 , pp. 90-94
- Takai, M.¹ Nishimoto, T.² Takagi, T.³ Kondo, M.⁴ Matsuda, A.⁵

5
- 84949600133
- Effect of higher-silane formation on electron temperature in a silane glow-discharge plasma
- to be published
- M. Takai, T. Nishimoto, M. Kondo, and A. Matsuda, "Effect of Higher-Silane Formation on Electron Temperature in a Silane Glow-Discharge Plasma", Appl. Phys. Lett., to be published.
- Appl. Phys. Lett.
- Takai, M.¹ Nishimoto, T.² Kondo, M.³ Matsuda, A.⁴

6
- 0033299967
- Assessment of intrinsic-layer growth temperature to high-deposition-rate a-si:H n-i-p solar cells deposited by hot-wire CVD
- Q. Wang, E. Iwaniczko, Y. Xu, B. Nelson, and H. Mahan, "Assessment of Intrinsic-Layer Growth Temperature to High-Deposition-Rate a-Si:H n-i-p Solar Cells Deposited by Hot-Wire CVD", Mat. Res. Soc. Symp. Proc. 557, 1999, pp. 163-168
- (1999) Mat. Res. Soc. Symp. Proc. , vol.557 , pp. 163-168
- Wang, Q.¹ Iwaniczko, E.² Xu, Y.³ Nelson, B.⁴ Mahan, H.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.