Temperature dependence at various intrinsic a-Si:H growth rates of P-I-N deposited solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn 2000-January, Issue , 2000, Pages 916-919

  Korevaar, B A ^a,b   Smit, C ^a,b   Smets, A H M ^b   Van Swaaij, R A C M M ^a   Schram, D C ^b   Van De Sanden, M C M ^b  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

A Si:H; High growth rates; Solar Cells

Indexed keywords

AMORPHOUS SILICON; DEPOSITION; DEPOSITION RATES; GROWTH RATE; SILICON SOLAR CELLS; TEMPERATURE DISTRIBUTION;

A-SI:H; CASCADED ARC; DEPOSITION TEMPERATURES; EXPANDING THERMAL PLASMAS; HIGH GROWTH RATE; OPTIMUM DEPOSITION; SOLAR CELL PERFORMANCE; TEMPERATURE DEPENDENCE;

SOLAR CELLS;

EID: 84949560212     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.916033     Document Type: Conference Paper

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