Sapphire Crystal Growth and Applications

Bulk Crystal Growth of Electronic, Optical and Optoelectronic Materials

Volumn , Issue , 2010, Pages 299-338

  Tatartchenko, V A ^a  

^a Saint Gobain Crystals   (United States)

Author keywords

Corundum crystal defects bubbles and solid inclusions, dislocations, twins, faceting; Corundum crystal growth in C axis direction and melt growth techniques of pulling from shaper (TPS); Corundum family of crystals leucosapphire, colorless, pure corundum crystals; Industrial crystal growth techniques characterization and industrial application of GPT for sapphire whisker growth; Sapphire applications field modern airborne optical reconnaissance systems; Sapphire crystal growth and applications; Sapphire structure and sapphire crystal growth techniques

Indexed keywords

CORUNDUM; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTAL STRUCTURE;

C-AXIS DIRECTION; CORUNDUM CRYSTALS; LEUCOSAPPHIRE; RECONNAISSANCE SYSTEMS; SAPPHIRE CRYSTAL; WHISKER GROWTH;

SAPPHIRE;

EID: 84948992890     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1002/9780470012086.ch10     Document Type: Chapter

References (66)

1. A. Verneuil, (1910) Sur un nouveau procède de fusion et d'affinage de l'alumine chromée et la production d'une matière possédant la composition, la dureté et la densité du rubis, Plis Cachettes #4752, 23 décembre 1891 et #4849, 19 décembre 1892, ouverts 11 juillet 1910: Paris Acad. Sci., Comptes Rendus, 151, 131-132.
2. A. Verneuil, (1902) Production artificielle du rubis par fusion, Paris Acad. Sci., Comptes Rendus, 135, 791-794.
3. N.V. Belov, (1947) Structure of Ionic Crystals and Metallic Phases [Struktura Ionnykh Kristallov I Metallicheskikh Faz into Russian], Academy of the Sciences of the USSR, Moscow.
4. Ch. Barta, (1968) Corundum monocrystals of large area, in Crystal Growth (Rost Cristallov, Russian), N.N. Sheftal (Ed.), 6A, 178-181, Consultants Bureau, New York.
5. W.J. Alford and W.H. Bauer, (1967) Radiofrequency plasma growth and crystalline perfection of single crystal alumina, J. Phys. Chem. Solids Suppl, 1, 71-74.
6. V.A. Tatartchenko, (1993) Shaped Crystal Growth, Kluwer Academic Publishers, Dordrecht, Boston, London.
7. V.A. Tatartchenko, (1994) Shaped Crystal Growth, in Handbook of Crystal Growth, D.T.J. Hurle (Ed.), 2b, North-Holland, Amsterdam, London, New York, Tokyo.
8. V.A. Borodin, E.A. Brener, and V.A. Tatartchenko, (1982) Investigation of the crystallization process in the Verneuil technique, Cryst. Res. Technol. 17, 1187-1197.
9. V.A. Tatartchenko, (1973) Influence of capillary phenomena on the stability of the crystallization process during the pulling of shaped specimens from the melt, Fiz. Khim. Obrabotki Mater. [Sov. Phys. Chem. Mater. Treatment] #6, 47-50.
10. G.A. Korn A and T.M. Korn, (1962) Mathematical Handbook for Scientists and Engineers, p. 282, McGraw-Hill Book Company, New York, San Francisco, Toronto, London, Sydney.
11. V.A. Tatartchenko and G.I. Romanova, (1973) Stability of crystallization by Verneuil Technique, Monokristalli I Technika [Sov. Single Crystals Tech.], #2, 48-53 Charkov.
12. G.I. Romanova, V.A. Tatartchenko and N.P. Tichonova, (1976) Stability of crystallization at the crystal growth by the gas flame technique, Trudi Goi, 54, #188, pp. 10-13 [Sov. Proc. State Optical Institute], Leningrad.
13. V.A. Borodin, E.A. Brener, T.A. Steriopolo, V.A. Tatartchenko and L.I. Chernishova, (1982) Growing single crystal corundum tubes by Verneuil technique in stable conditions, Cryst. Res. Technol., 17, 1199-1207.
14. V.A. Borodin, E.A. Brener, V.A. Tatartchenko, V.I. Gusev and I.N. Tsigler, (1981) Automation of the Verneuil technique on the basis of stability analysis, J. Cryst. Growth, 52, 505-508.
15. W. Class, H.R. Nesor, and G.T. Murray, (1967) Preparation of oxide crystals by a plasma float-zone technique, in Crystal Growth, H.S. Peiser (Ed), pp. 75-80, Pergamon, Oxford.
16. A.I. Somov, A.I. Svinarenko, and A.G. Tiutiunnik, (1966) Growth of corundum crystals by electron beam floating zone, Proc. Acad. Sci. USSR, Inorg Mater. (Russ.), 2, 1892-1894.
17. B. Cockayne, M. Chesswas, and D.B. Gasson, (1967) Single crystal growth of sapphire, J. Mater. Science, 2, 7-11.
18. G. Petit-Le Du and J. Aubree, (1967) Cristallogenèse du rubis par zone flottante dans un four a résistance, Rev. Phys. Appl., 2, 264-270.
19. K. Eickhoff and K. Gürs, (1969) Tiegelfreies zonenschmelzen von rubinkristallen durch ayfheizen der schmelzzone mittels laser, J. Cryst. Growth, 6, 21-25.
20. M. Saito, (1985) Gas-bubble formation of ruby single crystals by floating zone melt growth with an infrared radiation convergence type heater, J. Cryst. Growth, 71, 664-672.
21. A.E. Paladino and B.D. Roiter, (1964) Czochralski growth of sapphire, J. Am. Ceram. Soc., 47, 465-468.
22. T.B. Reed and R.E. Fahey, (1964) Czochralski growth of sapphire crystals in a resistance furnace, Solid State Res. Lincoln Lab. Mass. Inst. Technol., #4, 23-33.
23. F.R. Charvat, J.C. Smith and O.H. Nestor, (1967) Crystal Growth, Pergamon Press, 45.
24. Sapphire single crystals, (1966) Rev. Sci. Instrum., 37, 817-821.
25. V.V. Osiko, (1982) High-temperature Non-metallic CrystallineMaterials, in: Krishnan Lal (ed), Synthesis, Crystal Growth and Characterization, North-Holland Publishing Company, Amsterdam, New York, Oxford.
26. M.I. Musatov, (1975) Optimizing the method of growing high-quality large corundum crystals, Sov. J. Opt. Technol., 42, 461-464.
27. Ch.S. Bagdasarov, (1977) Problems of synthesis of refractory optic crystals, in Russian Rost Kristallov, E.I. Givargizov (Ed.), 11, pp 179-195, Erevan State University, Erevan, [Transl. Growth of Crystals, Consultants Bureau, New York, 1978].
28. F. Schmid and Viechnicki, (1970) Growth of sapphire discs from the melt by a gradient furnace technique, J. Am. Ceram. Soc., 53, 528-529.
29. D. Viechnicki and F. Schmid, (1974) Crystal growth using the heat exchanger method (HEM), J. Cryst. Growth, 26, 162-164.
30. C.P. Khattak and F. Schmid, (1984) Growth of large-diameter crystals by HEM for optical and laser applications, Proc. SPIE, 505, 4-8.
31. F. Schmid, C.P. Khattak, H.H. Rogers, D.M. Felt, J. Askinazi and R.V. Wientzen, (1999) Current status of very large sapphire crystal growth for optical applications, Proc. SPIE, 3705, 70-77.
32. Zhang Quiang, Deng Peizhen and Gan Fuxi, (1991) X-ray topographic observation of dislocation structure in sapphire single crystal grown by temperature gradient technique, J. Cryst. Growth, 108, 377-384.
33. A. Horowitz, S. Biderman, D. Gazit, et al., (1993) The growth of dome-shaped sapphire crystals by the gradient solidification meyhod (GSM), J. Cryst. Growth, 128, 824-828.
34. E.V. Gomperz, (1922) Untersuchungen an einkristalldrähten, Z. Phys., 8, 184-190.
35. A.V. Stepanov, (1959) A new technique of production of sheets, of tubes, of rods with different cross section from a melt, Zhurnal Tekhnicheskoi Fisiki., 39, 1302-1307 (Transl. in: Sov. Phys.-Tech. Phys.).
36. H.E. LaBelle, (1980) EFG, the invention and application to sapphire growth, J. Cryst. Growth., 50, 8-17.
37. V.A. Tatartchenko, A.I. Saet and A.V. Stepanov, (1969) Boundary conditions of capillary shaping at crystallization from melts, Izvestiya Akademii Nauk SSSR, Seriya Fizicheskaya, 33, 1954-1959 (Transl. In: Bulletin of the Academy of Sciences of the USSR, Physical Series).
38. V.A. Borodin, V.V. Sidorov, T.A. Steriopolo and V.A. Tatartchenko, (1986) Variable shaping growth of refractory oxide shaped crystals, J. Cryst. Growth, 82, 89-94.
39. V.N. Kurlov and S.V. Belenko, (1998) The growth of sapphire shaped crystals with continuously modulated dopants, J. Cryst. Growth, 191, 779-782.
40. V.N. Kurlov and B.M. Epelbaum, (1997) Fabrication of near-net-shaped sapphire domes by noncapillary shaping method, J. Cryst. Growth, 177, 175-180. 41. V.A. Borodin, V.V. Sidorov, S.N. Rassolenko, T.A. Steriopolo, V.A. Tatartchenko and T.N. Yalovets, (1990) Local shaping technique and new growth apparatus for complex sapphire products, J. Cryst. Growth, 104, 69-76.
41. V.A. Borodin, V.V. Sidorov, S.N. Rassolenko, T.A. Steriopolo, V.A. Tatartchenko and T.N. Yalovets, (1990) Local shaping technique and new growth apparatus for complex sapphire products, J. Cryst. Growth, 104, 69-76
42. J.W. Locher, H.E. Bennet, P.C. Archibald and C.T. Newmyer, (1990) Large diameter sapphire dome: fabrication and characterization. Proc. SPIE, 1326, 2-10.
43. V.A. Tatartchenko, V.S. Uspenski, E.V. Tatarchenko and B. Roux, (2000) Theoretical investigation of crystal growth shaping process with the wetting boundary condition, J. Cryst. Growth, 220, 301-307.
44. V.A. Timofeeva and R.A. Voskanian, (1963) Corundum crystal growth from lead fluorine flux, Crystallography [Sov. Kristallographia], 8, #2, 293-296.
45. K. Watanabe and I. Sunagawa, (1982) Surface micro-topography of corundum crystals grown from cryolite flux, J. Cryst. Growth, 57, 367-378.
46. K. Watanabe, A. Iida and Y. Sumioshi, (1981) Growth of corundum single crystals by seed rotation method, J. Cryst. Growth, 54, 381-393.
47. R.A. Laudise and A.A. Ballman, (1958) Hydrothermal synthesis of sapphire, J. Am. Chem. Soc., 80 #11, 2655-2657.
48. K.F. Kashkurov, P.I. Nikitichev, V.V. Osipov, L.D. Sizova and A.V. Simonov, (1967) Growth of big corundum crystals by hydrothermal method, Crystallography [Sov. Kristallographia], 12, #5, 956-957.
49. A.A. Shternberg and V.A. Kuznetsov, (1964) Corundum crystallization on seed from gas phase, Crystallography [Sov. Kristallographia], 9, #1, 121-123.
50. P.S. Schaffer, (1965) Vapor-phase growth of alpha alumina single crystals, J. Am. Ceram. Soc., 48, #10, 508-511.
51. Kh.S. Bagdasarov, (1980) Synthesis of large single crystals of corundum, in Ruby and Sapphire (Translated from Russian), L.M. Belyaev (Ed.), National Bureau of Standards, Washington, D.C.
52. M. Saito, (1986) Growth process of gas-bubble in ruby single crystals by floating zone method, J. Cryst. Growth, 74, 385-390.
53. A.V. Zhdanov, G.A. Satunkin, V.A. Tatartchenko and N.N. Talyanskaya, (1980) Cylindrical pores in a growing crystal, J. Cryst. Growth, 49, 659-664.
54. V.A. Tatartchenko, (1994) Cylindrical pores in a growing crystal, J. Cryst. Growth, 143, 294-300.
55. V.A. Tatartchenko, T.N. Yalovets, G.A. Satunkin, L.M. Zatulovsky, L.P. Egorov and D.Ya. Kravetsky, (1980) Defects in shaped sapphire crystals, J. Cryst. Growth, 50, 335-340.
56. A.A. Chernov, D.T. Temkin and A.M. Melnikova, (1976) Theory of inclusion capture at the melt crystal growth, Kristallographia (Sov. Crystallography), 21, #4, 652-660.
57. W.W. Mullins and R.F. Sekerka, (1964) Stability of flat interface at crystallization of dilute binary alloy, J. Appl. Phys, 35, 444-453.
58. E. Savrun, C. Toy, W.D. Scott and D.C. Harris, (1999) Is sapphire inherently weak in compression at high temperature? Proc. SPIE, 3705, 12-16.
59. V.A. Borodin, V.A. Tatartchenko, L.I. Chernishova and T.N. Yalovets, (1980) Influence of thermal conditions on faceting of corundum crystals grown by Verneuil technique, Crystallography [Sov. Kristallographia] 25, #3, 590-594.
60. D.C. Harris, (1999) Overview of progress in strengthening sapphire at elevated temperature, Proc. SPIE, 3705, 2-11.
61. T.M. Regan, D.C. Harris, R.M. Stroud et al., (2001) Compressive strengthening of sapphire by neutron irradiation, Proc. SPIE, 4375, 31-40.
62. M. Smith, K. Schmid, F. Schmid and C.P. Khattak, (1999) Correlation of crystallographic orientation with processing of sapphire optics, Proc. SPIE, 3705, 85-92.
63. J. Askinazi, R.V. Wientzen and C.P. Khattak, (2001) Development of large aperture, monolithic sapphire optical windows, Proc. SPIE, 4375, 1-11.
64. Zhang Shou-Qing, Tang Liang-An, Wang Wen, and Le Shou-Hong, (1980) The relationship between growth orientation and grain boundary generation in sapphire plate crystals grown by the EFG technique, J. Cryst. Growth, 50, 659-662.
65. T. Yuasa, Y. Ueta, Y. Tsuda, et al., (1999) Effect of slight misorientation of sapphire substrate on metalorganic chemical vapor deposition growth of GaN, Jpn. J. Appl. Phys, 38, 703-705.
66. L.M. Belyaev (1980) (Ed.), Ruby and Sapphire, National Bureau of Standards, Washington, D.C., (Translation from Russian original, published in 1974).