Growth of sapphire shaped crystals with continuously modulated dopants

Journal of Crystal Growth

Volumn 191, Issue 4, 1998, Pages 779-782

  Kurlov, V N ^a   Belenko, S V ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

Author keywords

Doping ions; Growth from an element of shape (GES) method; Oxide laser crystals; Sapphire single crystals; Shaped crystal growth; Titanium sapphire

Indexed keywords

DOPING (ADDITIVES); SAPPHIRE; SINGLE CRYSTALS;

GROWTH FROM AN ELEMENT OF SHAPE (GES) METHOD; TITANIUM SAPPHIRE;

CRYSTAL GROWTH;

EID: 0032141228     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00396-0     Document Type: Article

References (7)

1. N.-B. Ming, J.F. Hong, D. Feng, Appl. Phys. Lett. 17 (1982) 1663.
2. L.N. Dmitruk, Bull. Acad. Sci. USSR, Phys. Ser. 49 (1985) 2432.
3. P.I. Antonov, Yu.G. Nosov, S.P. Nikanorov, Bull. Acad. Sci. USSR, Phys. Ser. 49 (1985) 2295.
4. A.V. Nikiforov, Yu.G. Nosov, O.V. Klyavin, P.I. Antonov, M.B. Mikhamedzhanova, Bull. Acad. Sci. USSR, Phys. Ser. 52 (1988) 2025.
5. B.S. Red'kin, V.N. Kurlov, V.A. Tatarchenko, J. Crystal Growth 82 (1987) 106.
6. K. Shimamura, N. Kodama, T. Fukuda, J. Crystal Growth 142 (1994) 400.
7. A.A. Kaminsky, L.K. Aminov et. al, Physics and Spectroscopy of Laser Crystals, Nauka, Moscow, 1986, p. 272 (in Russian).