Bias-dependent drift resistance modeling for accurate DC and AC simulation of asymmetric HV-MOSFET

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn 2002-January, Issue , 2002, Pages 203-206

  Hefyene, N ^a   Vestiel, E ^b   Bakeroot, B ^c   Anghel, C ^a   Frere, S ^b   Ionescu, A M ^a   Gillon, R ^b  

^a EPFL   (Switzerland)

^b LUCENT TECHNOLOGIES   (United States)

^c GHENT UNIVERSITY   (Belgium)

Author keywords

Analytical models; CMOS technology; Data mining; Electrical resistance measurement; Integrated circuit modeling; MOSFETs; Numerical simulation; Performance evaluation; Testing; Voltage

Indexed keywords

ANALYTICAL MODELS; BIAS VOLTAGE; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; DATA MINING; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; HVDC POWER TRANSMISSION; INTEGRATED CIRCUIT TESTING; MOS DEVICES; NUMERICAL MODELS; SEMICONDUCTOR DEVICES; TESTING;

CMOS TECHNOLOGY; ELECTRICAL RESISTANCE MEASUREMENT; INTEGRATED CIRCUIT MODELING; MOSFETS; PERFORMANCE EVALUATION;

MOSFET DEVICES;

EID: 84948781998     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2002.1034552     Document Type: Conference Paper

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