An experimental approach for bias-dependent drain series resistances evaluation in asymmetric HV MOSFETs

European Solid-State Device Research Conference

Volumn , Issue , 2001, Pages 403-406

  Hefyene, N ^a   Anghel, C ^a   Ionescu, A M ^a   Frere, S ^b   Gillon, R ^b   Vermandel, M ^c   Bakeroot, B ^c   Doutreloigne, J ^c  

^a EPFL   (Switzerland)

^b LUCENT TECHNOLOGIES   (United States)

^c GHENT UNIVERSITY   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EXPERIMENTAL APPROACHES; MOSFETS; SERIES RESISTANCES;

EID: 27644550327     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2001.195286     Document Type: Conference Paper

References (7)

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4. K. Endo et al. " A 500V 1A 1-chip inverter IC on SOI wafer", PCIMProc. May 1998, p. 145
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6. H. Sumida, A. Hirabayashi, "noise current induced by switching of a dielectric isolated lateral insulated gate bipolar transistor on silicon on insulator", J. Appl. Phys. Vol 37 (1998).
7. C. S. Cowen et al. " Deep trench isolation in bonded wafer SOI Ics using high density ICP etcher", El. Chem. Soc. Proc. vol 96-3, p. 364