On the optimal shape and location of silicided source and drain contacts

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn 2002-January, Issue , 2002, Pages 39-42

  Oldiges, P ^a   Murthy, C ^a   Wang, Xinlin ^a   Fung, S ^a   Purtell, R ^a  

^a IBM RESEARCH   (United States)

Author keywords

Analytical models; Contact resistance; Doping profiles; Microelectronics; Ohmic contacts; Research and development; Schottky barriers; Semiconductor process modeling; Shape; Silicides

Indexed keywords

ANALYTICAL MODELS; CONTACT RESISTANCE; ELECTRIC RESISTANCE; ELECTRIC RESISTANCE MEASUREMENT; MICROELECTRONICS; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING;

DOPING PROFILES; RESEARCH AND DEVELOPMENT; SCHOTTKY BARRIERS; SEMICONDUCTOR PROCESS MODELING; SHAPE;

SILICIDES;

EID: 84948776223     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2002.1034511     Document Type: Conference Paper

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