A three-dimensional mesh generation method with precedent triangulation of boundary

IEICE Transactions on Electronics

Volumn E83-C, Issue 8, 2000, Pages 1343-1347

  Tanaka, Katsuhiko ^a   Notsu, Akio ^a   Furukawa, Akio ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Device simulation; Mesh generation

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; MOSFET DEVICES; SEMICONDUCTING SILICON; THREE DIMENSIONAL;

DEVICE SIMULATION; MESH GENERATION;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0034246644     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (5)

1. S. Kumashiro and I. Yokota, "A triangular mesh generation method suitable for the analysis of complex MOS device structures," Proc. NUPAD, pp.167-170, Honolulu, June 1994.
2. K. Tanaka, A. Notsu, and H. Matsumoto, "A new approach to mesh generation for complex 3d semiconductor device structures," Proc. SISPAD, pp.lG7-168, Tokyo, Sept. 199G.
3. P. Conti, N. Hitschfeld, and W. Fichtner, "ft-An octreebased mixed element grid allocator for the simulation of complex 3d device structures," IEEE Trans. Comput.-Aided Des. Integrated Circuits &: Syst., vol.10, no.10, pp.1231-1241, 1991.
4. E. Leitner, \V. Bohmayr, P. Fleischmann, E. Strasser, and S. Selberherr, "3d TCAD at TU Vienna," in 3-Dirnensional Process Simulation, ed. J. Lorcnz, pp.130-161, SpringerVerlag, Wien, 1995.
5. II. Tanimoto and N. Shigyo, "Discretization error in MOSFET device simulation," IEEE Trans. Comput.-Aided DCS. Integrated Circuits & Syst., vol.11, no.7, pp.921-925, 1992.