Harnessing the base-pushout effect for ESD protection in bipolar and BiCMOS technologies

Electrical Overstress/Electrostatic Discharge Symposium Proceedings

Volumn 2002-January, Issue , 2002, Pages 73-82

  Streibl, M ^a   Esmark, K ^a   Sieck, A ^a   Stadler, W ^a   Wendel, M ^a   Szatkowski, J ^a   Gossner H ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

BiCMOS integrated circuits; Character generation; Electric breakdown; Electrons; Electrostatic discharge; Kirk field collapse effect; Protection; Radio frequency; Radiofrequency identification; Voltage

Indexed keywords

BICMOS TECHNOLOGY; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ELECTRONS; ELECTROSTATIC DISCHARGE; RADIO FREQUENCY IDENTIFICATION (RFID); RADIO WAVES;

BICMOS INTEGRATED CIRCUITS; CHARACTER GENERATION; KIRK FIELD COLLAPSE EFFECT; PROTECTION; RADIO FREQUENCIES;

ELECTROSTATIC DEVICES;

EID: 84948737620     PISSN: 07395159     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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