Using Quantum Confinement to Uniquely Identify Devices

Scientific Reports

Volumn 5, Issue , 2015, Pages

  Roberts, J ^a   Bagci, I E ^b   Zawawi, M A M ^c   Sexton, J ^c   Hulbert, N ^a   Noori, Y J ^a   Young, M P ^a   Woodhead, C S ^a   Missous, M ^c   Migliorato, M A ^c   Roedig, U ^b   Young, R J ^a  

^a LANCASTER UNIVERSITY   (United Kingdom)

^b LANCASTER UNIVERSITY   (United Kingdom)

^c UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84946925831     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep16456     Document Type: Article

References (38)

1. Guin, G. et al. Counterfeit integrated circuits: a rising threat in the global semiconductor supply chain. in Proc. IEEE 102, 1207-1228 (2014).
2. Simmons, G. J. Contemporary Cryptology: The Science of Information Integrity (IEEE Press, New Jersey, 1994).
3. Barenghi, A., Breveglieri, L., Koren, I. & Naccache, D. Fault injection attacks on cryptographic devices: theory, practise and countermeasures. in Proc. IEEE 100, 3056-3076 (2012).
4. Pappu, R., Recht, B., Taylor, J. & Gershenfeld, N. Physical one-way functions. Science 297, 2026-2030 (2002).
5. Gassend, B., Clarke, D., Van Dijk, M. & Devadas, S. Silicon physical random functions. Paper presented at Computer and Communication Security Conference, Washington DC, USA. doi: 10.1145/586110.586132 (2002, Nov. 18-22).
6. Tehranipoor, M. & Wang, C. Introduction to Hardware Security and Trust. 67-74 (Springer, New York Dordrecht Heidelberg London, 2012).
7. Suh, G. E. & Devadas, S. Physical unclonable functions for device authentication and secret key generation. Paper presented at Design Automation Conference, San Diego, CA, USA. doi: 10.1145/1278480.1278484 (2007, June 4-8).
8. Koeberl, P., Li, J., Rajan, A., Vishik, C. & Wu, W. A practical device authentication scheme using SRAM PUFs. in Proc. of the 4th International Conference on Trust and Trustworthy Computing. 63-77 (Springer 2007).
9. Lee, J. W. et al. A technique to build a secret key in integrated circuits for identification and authentication application. IEEE Symposium on VLSI Circuits. 176-179 (IEEE 2004).
10. Lim, D. et al. Extracting secret keys from integrated circuits. IEEE Transactions on VLSI Systems 13, 1200-1205 (2005).
11. Guajardo, J., Kumar, S. S., Schrijen G. J. & Tuyls, P. FPGA intrinsic PUFs and their use for IP protection. Paper presented at Cryptographic Hardware and Embedded Systems. Vienna, Austria. Berlin, Springer (2007, Sept. 10-13).
12. Holcomb, D. E., Burleson, W. P. & Fu, K. Power-up SRAM state as an identifying fingerprint and source of true random numbers. IEEE Transactions on Computers 58, 1198-1210 (2009).
13. Helfmeier, C., Nedospasov, D., Boit, C. & Seifert, J. Cloning physically unclonable functions. Paper presented at IEEE International Symposium on Hardware-Oriented Security and Trust, Austin, TX, USA. doi: 10.1109/HST.2013.6581556 (2013, June 2-3).
14. Rürrmair, U. et al. Modeling attacks on physical unclonable functions. Paper presented at Conference on Computer and Communications Security, Chicago, IL, USA. doi: 10.1145/1866307.1866335 (2010, Oct. 4-8).
15. Merli, D., Schuster, D., Stumpf, F. & Sidl, G. Side Channel Analysis of PUFs and Fuzzy Extractors. Paper presented at 4th International Conference on Trust and Trustworthy Computing. Pittsburg, PA, USA. doi: 10.1007/978-3-642-21599-5-3 (2011, June 22-24).
16. Tsuchiya, M. & Sakaki, H. Dependence of resonant tunneling current on well widths in AlAs/GaAs/AlAs double barrier diode structures. Appl. Phys. Lett. 49, 88 (1986).
17. Cirac, J. I. & Zoller, P. Goals and opportunities in quantum simulation. Nature Phys. 8, 264-266 (2012).
18. Buluta, I. & Nori, F. Quantum Simulators. Science 236, 108-111 (2009).
19. Wilkinson, V. A., Kelly, M. J. & Carr, M. Tunnel devices are not yet manufacturable. Semicond. Sci. Technol. 12, 91-99 (1997).
20. Kelly, M. J. New statistical analysis of tunnel diode barriers. Semicond. Sci. Technol. 15, 79-83 (2000).
21. Dasmahapatra, P., Sexton, J., Missous, M., Shao, C. & Kelly, M. J. Thickness control of molecular beam epitaxy grown layers at the 0.01-0.1 monolayer level. Semicond. Sci. Technol. 27, 085007 (2012).
22. Shao, C., Sexton, J., Missous, M. & Kelly, M. J. Achieving reproducibility needed for manufacturing semiconductor tunnel devices. Electronics Letters 49, 10 (2013).
23. Missous, M., Kelly, M. J. & Sexton, J. Extremely uniform tunnel barriers for low-cost device manufacture. IEEE Electron Device Letters 36, 6 (2015).
24. Kelly, M. J. The unacceptable variability in tunnel current for proposed electronic device applications. Semicond. Sci. Technol. 21, L49-L51 (2006).
25. Lin, Y., van Rheenen, A. D. & Chou, S. Y. Current fluctuations in double-barrier quantum well resonant tunneling diodes. Appl. Phys. Lett. 59, 1105 (1991).
26. Ng, S., Surya, C., Brown, E. R. & Maki, P. A. Observation of random-telegraph noise in resonant-tunneling diodes. Appl. Phys. Lett. 62, 2262 (1993).
27. Wegscheider, W., Schedelbeck, G., Abstreiter, G., Rother, M. & Bichler, M. Atomically precise GaAs/AlGaAs quantum dots fabricated by twofold cleaved edge overgrowth. Phys. Rev. Lett. 79, 1917-1920 (1997).
28. Fölsch, S., Martinez-Blanco, J., Yang, J., Kanisawa, K. & Erwin, S. C. Quantum dots with single-atom precision. Nature Nanotech. 9, 505-508 (2014).
29. Kursawe, K., Sadeghi, A., Schellekens, D., Škorić, B. & Tuyls, P. Reconfigurable physical unclonable functions - enabling technology for tamper-resistant storage. Paper presented at IEEE International Workshop on Hardware-Oriented Security and Trust, San Francisco, CA, USA. doi: 10.1109/HST.2009.5225058 (2009, July 27).
30. Sen, S., Capasso, F., Cho, A. Y. & Sivco, D. Resonant tunneling device with multiple negative differential resistance: digital and signal processing applications with reduced circuit complexity. IEEE Transactions on Electron Devices. 34, 10 (1987).
31. Yan, Z. X., Fraser, S. & Deen, M. J. A new resonant-tunnel diode-based multivalued memory circuit using a MESFET depletion load. IEEE Journal of Solid-State Circuits. 27, 8 (1992).
32. Waho, T., Chen, K. J. & Yamamoto, M. A novel multiple-valued logic gate using resonant tunneling devices. IEEE Electron Device Letters. 17, 5 (1996).
33. Rürrmair, U. et al. Security applications of diodes with unique current-voltage characteristics. Lecture Notes in Computer Science. 6052, 328-335 (2010).
34. Li, P. W., Kuo, D. M. T. & Hsu, Y. C. Photoexcitation effects on charge transport of Ge quantum-dot resonant tunneling diodes. Appl. Phys. Lett. 89, 133105 (2006).
35. Lai, W., Kuo, D. M. T. & Li, P. Transient current through a single germanium quantum dot. Physica E 41, 886-889 (2009).
36. Chen, K., Chien, C. & Li, P. Precise Ge quantum dot placement for quantum tunneling devices. Nanotechnol. 21, 055302 (2010).
37. Maes, R. Physically Unclonable Functions (Springer, Berlin, 2013).
38. Zawawi, M. A. M., KaWa, I., Sexton, J. & Missous, M. Fabrication of sub-micrometer InGaAs/AlAs resonant tunneling diode using a tri-layer soft reflow technique with excellent scalability. IEEE Transactions on Electron Devices. 61, 2338-2342 (2014).