Observation of a hot-phonon bottleneck in lead-iodide perovskites

Nature Photonics

Volumn 10, Issue 1, 2016, Pages 53-59

  Yang, Ye ^a   Ostrowski, David P ^a   France, Ryan M ^a   Zhu, Kai ^a   Van De Lagemaat, Jao ^a   Luther, Joseph M ^a   Beard, Matthew C ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIUM IODIDE; BINDING ENERGY; ELECTROMAGNETIC WAVE ABSORPTION; EXCITONS; LEAD COMPOUNDS; LIGHT ABSORPTION; MOLECULAR BEAMS; PEROVSKITE; PHONONS;

BAND GAP RENORMALIZATION; CARRIER TEMPERATURE; EXCITATION WAVELENGTH; EXCITON TRANSITIONS; ORDERS OF MAGNITUDE; THREE ORDERS OF MAGNITUDE; TRANSIENT ABSORPTION SPECTRA; TRANSIENT ABSORPTION SPECTROSCOPIES;

ABSORPTION SPECTROSCOPY;

EID: 84945312238     PISSN: 17494885     EISSN: 17494893     Source Type: Journal    
DOI: 10.1038/nphoton.2015.213     Document Type: Article

References (42)

1. Im, J.-H., Lee, C.-R., Lee, J.-W., Park, S.-W. & Park, N.-G. 6.5% efficient perovskite quantum-dot-sensitized solar cell. Nanoscale 3, 4088-4093 (2011).
2. Kim, H.-S. et al. Lead iodide perovskite sensitized all-solid-state submicron thin film mesoscopic solar cell with efficiency exceeding 9%. Sci. Rep. 2, 591 (2012).
3. Lee, M. M., Teuscher, J., Miyasaka, T., Murakami, T. N. & Snaith, H. J. Efficient hybrid solar cells based on meso-superstructured organometal halide perovskites. Science 338, 643-647 (2012).
4. Burschka, J. et al. Sequential deposition as a route to high-performance perovskite-sensitized solar cells. Nature 499, 316-319 (2013).
5. Liu, D. & Kelly, T. L. Perovskite solar cells with a planar heterojunction structure prepared using room-temperature solution processing techniques. Nature Photon. 8, 133-138 (2014).
6. Liu, M., Johnston, M. B. & Snaith, H. J. Efficient planar heterojunction perovskite solar cells by vapour deposition. Nature 501, 395-398 (2013).
7. Tan, Z.-K. et al. Bright light-emitting diodes based on organometal halide perovskite. Nature Nanotech. 9, 687-692 (2014).
8. Fang, Y., Dong, Q., Shao, Y., Yuan, Y. & Huang, J. Highly narrowband perovskite single-crystal photodetectors enabled by surface-charge recombination. Nature Photon. 9, 679-686 (2015).
9. Zhu, H. et al. Lead halide perovskite nanowire lasers with low lasing thresholds and high quality factors. Nature Mater. 14, 636-642 (2015).
10. Xing, G. et al. Low-temperature solution-processed wavelength-tunable perovskites for lasing. Nature Mater. 13, 476-480 (2014).
11. Manser, J. S. & Kamat, P. V. Band filling with free charge carriers in organometal halide perovskites. Nature Photon. 8, 737-743 (2014).
12. Xing, G. et al. Long-range balanced electron-and hole-transport lengths in organic-inorganic CH3NH3PbI3. Science 342, 344-347 (2013).
13. Elliott, R. J. Intensity of optical absorption by excitons. Phys. Rev. 108, 1384-1389 (1957).
14. Sturge, M. D. Optical absorption of gallium arsenide between 0.6 and 2.75 eV. Phys. Rev. 127, 768-773 (1962).
15. Wiesenfeld, J. M. & Taylor, A. J. Picosecond band filling in highly excited In-Ga-As-P films. Phys. Rev. B 34, 8740-8749 (1986).
16. Puthussery, J., Lan, A., Kosel, T. H. & Kuno, M. Band-filling of solutionsynthesized CdS nanowires. ACS Nano 2, 357-367 (2008).
17. Huang, D., Chyi, J.-I. & Morkoç, H. Carrier effects on the excitonic absorption in GaAs quantum-well structures: phase-space filling. Phys. Rev. B 42, 5147-5153 (1990).
18. Calcagnile, L. et al. Free-carrier effects on the excitonic absorption of n-type modulation-doped Zn1-xCdxSe/ZnSe multiple quantum wells. Phys. Rev. B 52, 17248-17253 (1995).
19. Lee, Y. H. et al. Room-temperature optical nonlinearities in GaAs. Phys. Rev. Lett. 57, 2446-2449 (1986).
20. Shah, J., Leheny, R. F. & Lin, C. Dynamic Burstein shift in GaAs. Solid State Commun. 18, 1035-1037 (1976).
21. Yin, W.-J., Shi, T. & Yan, Y. Unique properties of halide perovskites as possible origins of the superior solar cell performance. Adv. Mater. 26, 4653-4658 (2014).
22. Amat, A. et al. Cation-induced band-gap tuning in organohalide perovskites: interplay of spin-orbit coupling and octahedra tilting. Nano Lett. 14, 3608-3616 (2014).
23. Giorgi, G., Fujisawa, J.-I., Segawa, H. & Yamashita, K. Small photocarrier effective masses featuring ambipolar transport in methylammonium lead iodide perovskite: A density functional analysis. J. Phys. Chem. Lett. 4, 4213-4216 (2013).
24. Chemla, D. S., Miller, D. A. B., Smith, P. W., Gossard, A. C. & Wiegmann, W. Room temperature excitonic nonlinear absorption and refraction in GaAs/ AlGaAs multiple quantum well structures. IEEE J. Quantum Electron. 20, 265-275 (1984).
25. Brinkman, W. F. & Rice, T. M. Electron-hole liquids in semiconductors. Phys. Rev. B 7, 1508-1523 (1973).
26. Binet, F., Duboz, J. Y., Off, J. & Scholz, F. High-excitation photoluminescence in GaN: hot-carrier effects and the Mott transition. Phys. Rev. B 60, 4715-4722 (1999).
27. Tanaka, S., Kobayashi, H., Saito, H. & Shionoya, S. Luminescence of high density electron-hole plasma in GaAs. J. Phys. Soc. Jpn 49, 1051-1059 (1980).
28. Ryan, J. F. et al. Time-resolved photoluminescence of two-dimensional hot carriers in GaAs-AlGaAs heterostructures. Phys. Rev. Lett. 53, 1841-1844 (1984).
29. Von der Linde, D. & Lambrich, R. Direct measurement of hot-electron relaxation by picosecond spectroscopy. Phys. Rev. Lett. 42, 1090-1093 (1979).
30. Leheny, R. F., Shah, J., Fork, R. L., Shank, C. V. & Migus, A. Dynamics of hot carrier cooling in photo-excited GaAs. Solid State Commun. 31, 809-813 (1979).
31. Kash, K. & Shah, J. Carrier energy relaxation in In0.53Ga0.47As determined from picosecond luminescence studies. Appl. Phys. Lett. 45, 401-403 (1984).
32. Zanato, D., Balkan, N., Ridley, B. K., Hill, G. & Schaff,W. J. Hot electron cooling rates via the emission of LO-phonons in InN. Semicond. Sci. Technol. 19, 1024-1028 (2004).
33. Huang, L.-y. & Lambrecht, W. R. L. Electronic band structure, phonons, and exciton binding energies of halide perovskites CsSnCl3, CsSnBr3, and CsSnI3. Phys. Rev. B 88, 165203 (2013).
34. Rosenwaks, Y. et al. Hot-carrier cooling in GaAs: quantum wells versus bulk. Phys. Rev. B 48, 14675-14678 (1993).
35. Pelouch, W. S. et al. Comparison of hot-carrier relaxation in quantum wells and bulk GaAs at high carrier densities. Phys. Rev. B 45, 1450-1453 (1992).
36. Shah, J. Hot electrons and phonons under high intensity photoexcitation of semiconductors. Solid-State Electron. 21, 43-50 (1978).
37. Yoffa, E. J. Screening of hot-carrier relaxation in highly photoexcited semiconductors. Phys. Rev. B 23, 1909-1919 (1981).
38. Pötz, W. Hot-phonon effects in bulk GaAs. Phys. Rev. B 36, 5016-5019 (1987).
39. Joshi, R. P. & Ferry, D. K. Hot-phonon effects and interband relaxation processes in photoexcited GaAs quantum wells. Phys. Rev. B 39, 1180-1187 (1989).
40. Rühle, W. W., Leo, K. & Bauser, E. Cooling of a hot electron-hole plasma in AlxGa1-xAs. Phys. Rev. B 40, 1756-1761 (1989).
41. Conibeer, G., Guillemoles, J., Yu, F. & Levard, H. in Advanced Concepts in Photovoltaics (eds Nozik, A. J., Conibeer, G. & Beard, M. C.) Ch. 12, 379-424 (Royal Society of Chemistry, 2014).
42. Kuo, S.-Y., Li, C.-T. & Hsieh,W.-F. Decreasing giant splitting of longitudinal and transverse optical phonons in PbxSr1-xTiO3 due to Pb covalency. Appl. Phys. Lett. 81, 3019-3021 (2002).