The interaction between oxygen vacancies and doping atoms in ZnO

Materials and Design

Volumn 87, Issue , 2015, Pages 969-973

  Si, Xiaodong ^a   Liu, Yongsheng ^a   Wu, Xinfang ^a   Lei, Wei ^a   Xu, Juan ^a   Du, Wenlong ^a   Zhou, Tao ^a   Lin, Jia ^a  

^a SHANGHAI UNIVERSITY OF ELECTRIC POWER   (China)

Author keywords

Doping; First principles; Oxygen vacancy; ZnO

Indexed keywords

CALCULATIONS; CRYSTAL IMPURITIES; CRYSTAL STRUCTURE; DEFECT DENSITY; DOPING (ADDITIVES); OXYGEN; SILVER; VACANCIES; ZINC OXIDE;

CALCULATION RESULTS; FIRST PRINCIPLES; FORMATION ENERGIES; HOLE CONDUCTIVITY; LATTICE STRUCTURES; P-TYPE IMPURITIES; UNIT-CELL VOLUME; ZNO;

OXYGEN VACANCIES;

EID: 84944185165     PISSN: 02641275     EISSN: 18734197     Source Type: Journal    
DOI: 10.1016/j.matdes.2015.08.027     Document Type: Article

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