Semipolar (112¯2) InGaN light-emitting diodes grown on chemically-mechanically polished GaN templates

Physica Status Solidi (A) Applications and Materials Science

Volumn 212, Issue 10, 2015, Pages 2196-2200

  Dinh, Duc V ^a   Akhter, Mahbub ^a   Presa, Silvino ^a,b   Kozlowski, Grzegorz ^a   O'Mahony, Donagh ^a   Maaskant, Pleun P ^a   Brunner, Frank ^c   Caliebe, Marian ^d   Weyers, Markus ^c   Scholz, Ferdinand ^d   Corbett, Brian ^a   Parbrook, Peter J ^a,b  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b UNIVERSITY COLLEGE CORK   (Ireland)

^c LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^d UNIVERSITY OF ULM   (Germany)

Author keywords

GaN templates; InGaN; Luminescence; metal organic vapour phase epitaxy; nitrides; polishing; semipolar light emitting diodes

Indexed keywords

DIODES; EPITAXIAL GROWTH; GALLIUM NITRIDE; LIGHT; LUMINESCENCE; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; ORGANOMETALLICS; POLISHING; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; VAPOR PHASE EPITAXY;

100-MM-DIAMETER WAFER; CHEMICALLY MECHANICALLY POLISHED; GAN TEMPLATE; INGAN; METAL-ORGANIC VAPOUR PHASE EPITAXY; PEAK EMISSION WAVELENGTH; QUANTUM WELL LIGHT EMITTING DIODES; SEMIPOLAR;

LIGHT EMITTING DIODES;

EID: 84943817987     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201532350     Document Type: Article

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