High-performance bottom-gate poly-Si/SiN TFTs on glass-substrate

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1992-December, Issue , 1992, Pages 669-672

  Shimizu, K ^a   Sugiura, O ^a   Matsumura, M ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; EXCIMER LASERS; GLASS; POLYCRYSTALLINE MATERIALS; SILICON NITRIDE;

BOTTOM GATE; DUAL BEAM; GLASS SUBSTRATES; HIGH ELECTRON MOBILITY; PREANNEALING; THIN SILICON LAYERS;

SUBSTRATES;

EID: 84942738334     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1992.307449     Document Type: Conference Paper

References (5)

1. K. Sera et al., "High-Performance TFTs Fabricated by XcCl Excimer Laser Annealing of Hydrogenated Aniorphous-Silicon Film", IEEE Trans. Electron Devices, vol. ED-36, pp. 2368-2872, 1989.
2. B. C. Ahn, H. Kanoh, 0. Sugiura and M. Matsumura, "Batch-Processing of High-Performance Amorphous-SilicodSilicon-Nitride Thin-Film Transistors", Conf. Rec. of the 1991 Int'l Display Research Conference, pp. 85.
3. K. Shimizu, 0. Sugiura and M. Matsumura, "High-Mobility Poly-Si Thin-Film Transistors Fabricated by A Novel Excimer-Laser Crystallization Method", in press (December issue of IEEE Trans. Electron Devices).
4. K. Shimizu, M. Higashimoto, K. Nakamura, 0. Sugiura and M. Matsumura, "High-Performance Poly-Si Thin-Film Transistors with Excimer-Laser Annealed Silicon-Nitride Gate", Extended Abstracts of the 1992 Int'l Conference on Solid State Devices and Materials, pp. 49.
5. K. Shimizu, H. Hosoya, 0. Sugiura and M. Matsumura, "High-Mobility Bottom-Gate Thin-Film Transistors with Laser-Crystallized and Hydrogen-Radical-Annealed Polysilicon Film", Jpn. J. Appl. Phys., vol. 30, pp. 3704-3709, 1991.