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Journal of Applied Physics

Volumn 118, Issue 11, 2015, Pages

Validity of the concept of band edge in organic semiconductors

(1) Horowitz, Gilles a

a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES (France)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DOPING;

ANALYSIS OF DATA; DENSITY OF CHARGES; DENSITY OF STATE; DOPING LEVELS; GAUSSIAN CURVES; INFLECTION POINTS; INORGANIC SEMICONDUCTORS; TRANSPORT MODELS;

GAUSSIAN DISTRIBUTION;

EID: 84941978842 PISSN: 00218979 EISSN: 10897550 Source Type: Journal
DOI: 10.1063/1.4931061 Document Type: Article

Times cited : (55)

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