Intrinsic homogeneous linewidth and broadening mechanisms of excitons in monolayer transition metal dichalcogenides

Nature Communications

Volumn 6, Issue , 2015, Pages

  Moody, Galan ^a,h   Kavir Dass, Chandriker ^a   Hao, Kai ^a   Chen, Chang Hsiao ^b   Li, Lain Jong ^c   Singh, Akshay ^a   Tran, Kha ^a   Clark, Genevieve ^d,e   Xu, Xiaodong ^d,e   Berghäuser, Gunnar ^f   Malic, Ermin ^g   Knorr, Andreas ^f   Li, Xiaoqin ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b FENG CHIA UNIVERSITY   (Taiwan)

^c KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

^d UNIVERSITY OF WASHINGTON   (United States)

^e University of Washington   (United States)

^f TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^g CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^h NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHALCOGEN; TRANSITION ELEMENT; TUNGSTEN DERIVATIVE;

CHEMICAL BONDING; DISSIPATION; FTIR SPECTROSCOPY; LOW TEMPERATURE; QUANTITATIVE ANALYSIS; QUANTUM MECHANICS; TRANSITION ELEMENT;

ARTICLE; FOURIER ANALYSIS; LOW TEMPERATURE; MOLECULAR DYNAMICS; MOLECULAR INTERACTION; MOLECULAR MECHANICS; OPTICS; PHONON; QUANTITATIVE ANALYSIS; SEMICONDUCTOR;

EID: 84941881877     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms9315     Document Type: Article

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