A 28nm embedded SG-MONOS flash macro for automotive achieving 200MHz read operation and 2.0MB/S write throughput at Ti, of 170°C

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn 58, Issue , 2015, Pages 132-133

  Taito, Yasuhiko ^a   Nakano, Masaya ^a   Okimoto, Hiromi ^a   Okada, Daisuke ^a   Ito, Takashi ^a   Kono, Takashi ^a   Noguchi, Kenji ^a   Hidaka, Hideto ^a   Yamauchi, Tadaaki ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADVANCED DRIVER ASSISTANCE SYSTEMS; AUTOMOBILE DRIVERS; DIELECTRIC MATERIALS; EMBEDDED SYSTEMS; HIGH TEMPERATURE OPERATIONS; LEAKAGE CURRENTS; OXIDE FILMS; RANDOM ACCESS STORAGE; REAL TIME SYSTEMS;

APPLICATION RANGE; AUTOMOTIVE TECHNOLOGY; DATA RELIABILITY; EMBEDDED FLASH MEMORY (E-FLASH); JUNCTION TEMPERATURES; METAL INTERCONNECTIONS; TIME-DEPENDENT DIELECTRIC BREAKDOWN LIFETIMES; WRITE THROUGHPUTS;

FLASH MEMORY;

EID: 84940741367     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSCC.2015.7062961     Document Type: Conference Paper

References (3)

1. T. Kono et al., "40nm Embedded SG-MONOS Flash Macros for Automotive with 160MHz Random Access for Code and Endurance Over 10M Cycles for Data", ISSCC Dig. Tech. Papers, pp. 212-214, 2013
2. J. D. Bude et al., "Secondary Electron Flash-A High Performance Low Power Flash Technology for 0.35μm and Below", IEDM Dig. Tech. Papers, pp. 279-282, 1997
3. M. Jefremow et al., "A 65nm 4MB Embedded Flash Macro for Automotive Achieving a Read Throughput of 5.7GB/s and a Write Throughput of 1.4MB/s", Proc. ESSCIRC, pp. 193-196, 2013