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Volumn 8, Issue 9, 2015, Pages 2644-2649

Interface engineering of the photoelectrochemical performance of Ni-oxide-coated n-Si photoanodes by atomic-layer deposition of ultrathin films of cobalt oxide

(13) Zhou, Xinghao a,b Liu, Rui a Sun, Ke a,c Friedrich, Dennis a,d McDowell, Matthew T a,c Yang, Fan a,c Omelchenko, Stefan T a,b Saadi, Fadl H a,b Nielander, Adam C c Yalamanchili, Sisir a,b Papadantonakis, Kimberly M a,c Brunschwig, Bruce S a,e Lewis, Nathan S a,c,e

a CALIFORNIA INSTITUTE OF TECHNOLOGY (United States)

b California Institute of Technology (United States)

c California Institute of Technology (United States)

d HAHN MEITNER INSTITUT (Germany)

e CALIFORNIA INSTITUTE OF TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; ELECTROCHEMISTRY; NICKEL OXIDE; OXIDE FILMS; POTASSIUM HYDROXIDE; SILICON; SILICON COMPOUNDS; ULTRATHIN FILMS;

COATING YIELDS; EQUILIBRIUM POTENTIALS; INTERFACE ENGINEERING; ONSET POTENTIAL; PHOTO-ELECTRODES; PHOTOELECTROCHEMICAL PERFORMANCE; SOLAR ILLUMINATION; WATER OXIDATION;

COBALT COMPOUNDS;

COBALT; ELECTROCHEMICAL METHOD; ELECTRODE; FILM; NITROGEN; OXIDATION; OXIDE; PERFORMANCE ASSESSMENT; PHOTOVOLTAIC SYSTEM; POTASSIUM; SILICON; WATER;

EID: 84940473022 PISSN: 17545692 EISSN: 17545706 Source Type: Journal
DOI: 10.1039/c5ee01687h Document Type: Article

Times cited : (128)

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