Photoluminescence of focused ion beam implanted Er3+: Y2SiO5 crystals

Physica Status Solidi - Rapid Research Letters

Volumn 8, Issue 10, 2014, Pages 880-884

  Kukharchyk, Nadezhda ^a   Pal, Shovon ^a   Rödiger, Jasper ^a   Ludwig, Arne ^a   Probst, Sebastian ^b   Ustinov, Alexey V ^b   Bushev, Pavel ^c   Wieck, Andreas D ^a  

^a RUHR UNIVERSITY BOCHUM   (Germany)

^b KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

^c SAARLAND UNIVERSITY   (Germany)

Author keywords

Annealing; Doping; Ion implantation; Photoluminescence; Rare earths; Y2SiO5

Indexed keywords

ANNEALING; CRYSTAL SYMMETRY; DOPING (ADDITIVES); EFFICIENCY; ERBIUM; FOCUSED ION BEAMS; ION IMPLANTATION; IONS; PHOTOLUMINESCENCE; QUANTUM OPTICS; RARE EARTHS;

ERBIUM DOPED; FLUENCES; FOCUSED ION BEAM TECHNIQUE; HOMOGENEOUS DOPING; IMPLANTATION PROCESS; ION ACTIVATION; OF QUANTUM-INFORMATION; POSTIMPLANTATION ANNEALING;

ION BEAMS;

EID: 84939258152     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201409304     Document Type: Article

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