Comparison of graphene growth on arbitrary non-catalytic substrates using low-temperature PECVD

Carbon

Volumn 93, Issue , 2015, Pages 393-399

  Chugh, Sunny ^a   Mehta, Ruchit ^a   Lu, Ning ^b   Dios, Francis D ^b   Kim, Moon J ^b   Chen, Zhihong ^a  

^a Purdue University   (United States)

^b The University of Texas at Dallas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COPPER; DEPOSITION; GRAPHENE; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; QUARTZ; TEMPERATURE; VAPOR DEPOSITION;

CATALYTIC MATERIALS; CHARACTERIZATION TECHNIQUES; CHEMICAL VAPOR DEPOSITIONS (CVD); COMMERCIAL DEVICES; LOW TEMPERATURE GROWTH; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITIONS (PE CVD); UNDESIRABLE EFFECTS; UNINTENTIONAL DOPING;

SUBSTRATES;

EID: 84938601239     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2015.05.035     Document Type: Article

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