P-type doping of elemental bismuth with indium, gallium and tin: A novel doping mechanism in solids

Energy and Environmental Science

Volumn 8, Issue 7, 2015, Pages 2027-2040

  Jin, Hyungyu ^a   Wiendlocha, Bartlomiej ^a,b   Heremans, Joseph P ^a,c  

^a The Ohio State University   (United States)

^b AGH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Poland)

^c OHIO STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; BISMUTH; CARRIER MOBILITY; CRYSTAL IMPURITIES; ELECTRIC CURRENTS; ELECTRONIC STRUCTURE; ELECTRONS; GALLIUM; INDIUM; IONIZATION; SEMICONDUCTOR DEVICES; SHUBNIKOV-DE HAAS EFFECT; SINGLE CRYSTALS; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY; TIN; VALENCE BANDS;

CONDUCTION ELECTRONS; ELECTRONIC STRUCTURE CALCULATIONS; HALL EFFECT MEASUREMENT; IONIZED IMPURITY SCATTERING; POLYCRYSTALLINE SAMPLES; THERMO-ELECTRIC MATERIALS; THERMOELECTRIC FIGURE OF MERIT; THERMOMAGNETIC DATUM;

SEMICONDUCTOR DOPING;

BISMUTH; CRYSTALLINITY; DATA SET; ELECTRICAL CONDUCTIVITY; ELECTRON; EXPERIMENTAL STUDY; GALLIUM; INDIUM; IONIZATION; MAGNETIC PROPERTY; TIN;

EID: 84936879038     PISSN: 17545692     EISSN: 17545706     Source Type: Journal    
DOI: 10.1039/c5ee01309g     Document Type: Article

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