Electrical Properties and Defect Chemistry of In-Doped TiO2 in Terms of the Jonker Formalism

Journal of Physical Chemistry A

Volumn 119, Issue 17, 2015, Pages 4032-4040

  Nowotny, Janusz ^a   Bak, Tadeusz ^a   Ionescu, Mihail ^b   Alim, Mohammad A ^a  

^a UNIVERSITY OF WESTERN SYDNEY   (Australia)

^b AUSTRALIAN NUCLEAR SCIENCE AND TECHNOLOGY ORGANISATION   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEFECTS; ELECTRON GAS; ELECTRONIC PROPERTIES; ELECTRONS; GASES; HYDROGEN; MAGNETIC SEMICONDUCTORS; OXIDE MINERALS; STRUCTURAL PROPERTIES; TITANIUM DIOXIDE;

ELECTRICAL CONDUCTIVITY; MAXWELL-BOLTZMANN STATISTICS; OXIDIZING CONDITIONS; REDUCING CONDITIONS; SEMI-CONDUCTING PROPERTY; STRONG INTERACTION; STRUCTURAL DOMAINS; THEORETICAL MODELING;

INDIUM COMPOUNDS;

EID: 84929500793     PISSN: 10895639     EISSN: 15205215     Source Type: Journal    
DOI: 10.1021/acs.jpca.5b01368     Document Type: Article

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