Effect of indium segregation on the surface versus bulk chemistry for indium-doped TiO2

ACS Applied Materials and Interfaces

Volumn 4, Issue 12, 2012, Pages 6626-6634

  Atanacio, Armand J ^a,b   Bak, Tadeusz ^b   Nowotny, Janusz ^b  

^a AUSTRALIAN NUCLEAR SCIENCE AND TECHNOLOGY ORGANISATION   (Australia)

^b UNIVERSITY OF WESTERN SYDNEY   (Australia)

Author keywords

defect disorder; indium; rutile; segregation; surface structure; titanium dioxide

Indexed keywords

BULK COMPOSITIONS; BULK PHASE; DEFECT COMPLEX; DEFECT DISORDER; DOPED-TIO; EFFECT OF OXYGEN; GASPHASE; INDIUM IONS; INDIUM SEGREGATION; INTERSTITIAL SITES; OXYGEN ACTIVITY; PROTON INDUCED X-RAY EMISSIONS; RUTILE; STRONG INTERACTION; SURFACE ENRICHMENT; TIO; XPS ANALYSIS;

ENERGY CONVERSION; INDIUM; OXIDE MINERALS; OXYGEN; PHOTOELECTRONS; SECONDARY ION MASS SPECTROMETRY; SEGREGATION (METALLOGRAPHY); SURFACE STRUCTURE; TITANIUM; TITANIUM DIOXIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

SURFACE SEGREGATION;

EID: 84871642444     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am301729z     Document Type: Article

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