Electrical properties and defect chemistry of indium-doped TiO2. Thermoelectric power

Ionics

Volumn 21, Issue 7, 2015, Pages 2019-2029

  Nowotny, Janusz ^a   Alim, Mohammad A ^a   Bak, Tadeusz ^a   Atanacio, Armand J ^b   Malik, Anam ^a  

^a UNIVERSITY OF WESTERN SYDNEY   (Australia)

^b AUSTRALIAN NUCLEAR SCIENCE AND TECHNOLOGY ORGANISATION   (Australia)

Author keywords

Oxygen activity; Rutile; Semiconducting properties

Indexed keywords

GRAIN BOUNDARIES; INDIUM; OXIDE MINERALS; OXYGEN; SURFACE DEFECTS; TITANIUM DIOXIDE;

DEFECT CHEMISTRY; DEFECT DISORDER; DUAL MECHANISMS; ELEVATED TEMPERATURE; MEASUREMENTS OF; OXYGEN ACTIVITY; RUTILE; SEMI-CONDUCTING PROPERTY;

SEMICONDUCTING INDIUM;

EID: 84931954859     PISSN: 09477047     EISSN: 18620760     Source Type: Journal    
DOI: 10.1007/s11581-014-1351-5     Document Type: Article

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