2D AlN crystal phase formation on (0001) Al2O3 surface by ammonia MBE

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 12, Issue 4-5, 2015, Pages 443-446

  Malin, Timur ^a   Mansurov, Vladimir ^a   Galitsyn, Yury ^a   Zhuravlev, Konstantin ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

2D AlN film; Ammonia; Chemical kinetics; Diffraction; MBE

Indexed keywords

ALUMINA; ALUMINUM OXIDE; AMMONIA; DIFFRACTION; III-V SEMICONDUCTORS; INTEGRAL EQUATIONS; KINETIC THEORY; KINETICS; MOLECULAR BEAM EPITAXY; REACTION KINETICS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE;

ALN FILMS; CRYSTAL PHASE FORMATION; EXPERIMENTAL VALUES; KINETIC EQUATIONS; NITRIDATION PROCESS; PRECISION MEASUREMENT; STRUCTURE PARAMETER; TWO DIMENSIONAL (2 D);

ALUMINUM NITRIDE;

EID: 84928585843     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201400168     Document Type: Article

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