Valley light-emitting transistor

NPG Asia Materials

Volumn 6, Issue 9, 2014, Pages e124-

  Yao, Wang ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84928153721     PISSN: 18844049     EISSN: 18844057     Source Type: Journal    
DOI: 10.1038/am.2014.69     Document Type: Short Survey

References (5)

1. Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010).
2. Splendiani, A., Sun, L., Zhang, Y., Li, T., Kim, J., Chin, C.-Y., Galli, G. & Wang, F. Emerging photoluminescence in monolayer MoS2. Nano. Lett. 10, 1271-1275 (2010).
3. Xiao, D., Liu, G.-B., Feng, W., Xu, X. & Yao, W. Coupled spin and valley physics in monolayers of MoS2 and other group VI dichalcogenides. Phys. Rev. Lett. 108, 196802 (2012).
4. Zhang, Y. J., Oka, T., Suzuki, R., Ye, J. T. & Iwasa, Y. Electrically switchable chiral light-emitting transistor. Science 344, 725-728 (2014).
5. Yu, H., Wu, Y., Liu, G., Xu, X. & Yao, W. Nonlinear valley and spin currents from Fermi pocket anisotropy in 2D crystals. Preprint at http://arXiv.org/abs/1406.2931(2014).